| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SA1016 960 123 1.3 1.3 1 : Emitter 2 : Collecor 3 : Base SANYO : NP 2SA1016, 2SC2362 ( –)120 ( –)100 2SA1016K, 2SC2362K ( –)150 ( –)120 ( –)5 ( –)50 ( –)100 400 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit ( –)1.0 µA ( –)1.0 µA 160* |
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Sanyo Semicon Device |
Capacitance-Digital-Converter LSI • Detection system: Differential capacitance detection (Mutual capacitance type) • Input capacitance resolution: Can detect capacitance changes in the femto Farad order • Measurement interval (16 differential inputs): 30ms (Typ) (at initial configura |
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Sanyo Semicon Device |
Capacitance-Digital-Converter LSI • Detection system: Differential capacitance detection (Mutual capacitance type) • Input capacitance resolution: Can detect capacitance changes in the femto Farad order • Measurement interval (16 differential inputs): 30ms (Typ) (at initial configura |
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Sanyo Semicon Device |
PNP/NPN Silicon Transistors apacitance Cob VCB=( –)10V, f=1MHz Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Noise Level Noise Peak Level VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO |
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Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications |
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Sanyo Semicon Device |
1.0A Single-Phase Bridge Rectifier · Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1093 [DBA10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified C |
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Sanyo Semicon Device |
90V 10A Rectifier · Low forward voltage (VF max=0.75V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. 1:Anode 2:Cathode 3:Anode SANYO:TO-220ML Specificat |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors D 60 to 120 Symbol ICBO IEBO hFE fT Cob VBE E 100 to 200 Conditions VCB=( –)120V, IE=0 VEB=( –)4V, IC=0 VCE=( –)5V, IC=( –)300mA VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz VCE=( –)5V, IC=( –)10mA Ratings min typ max ( –)10 ( –)10 60* 100 (30) 23 ( –)1.5 200 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors 960 123 1.3 1.3 1 : Emitter 2 : Collecor 3 : Base SANYO : NP 2SA1016, 2SC2362 ( –)120 ( –)100 2SA1016K, 2SC2362K ( –)150 ( –)120 ( –)5 ( –)50 ( –)100 400 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit ( –)1.0 µA ( –)1.0 µA 160* |
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Sanyo Semicon Device |
Very High-Definition Color Display/ Horizontal Deflection Output Applications |
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Sanyo Semicon Device |
10.0A Single-Phase Bridge Rectifier · Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A. Package Dimensions unit:mm 1090 [DBA100] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
1.0A Power Rectifier |
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Sanyo Semicon Device |
40V 10A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Surface mount type device reducing the assembling time and facilitating compact and high-density |
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Sanyo Semicon Device |
90V 10A Rectifier · Low forward voltage (VF max=0.75V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Surface mount type devices facilitating compactness and high density of SBA100-09Y-applied sets. |
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Sanyo Semicon Device |
40V 10A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. 1:Anode 2:Cathode 3:Anode SANYO:TO-220ML Specificat |
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