| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
UHF Amp/Mixer Applications |
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Sanyo Semicon Device |
High-Frequency General-Purpose Amp Applications |
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Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET · MOSFET with a back gate terminal. · Enhancement type. · Small ON resistance. · Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1. |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Enhancement type • Small noise figure • Small cross modulation N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Vo |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Enhancement type. · Easy AGC (Cut off at VG2S=0V). · Small noise figure. · Excels in cross modulation characteristics. Package Dimensions unit:mm 2096A [3SK264] 1.9 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specification |
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Sanyo Semicon Device |
VHF/ CATV Tuner/ High-Frequency Amp Applications |
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