Sanyo Semicon Device 16S fiche technique

No.	Partie #	Fabricant	Description
1	OS-CON16SVP100M	Sanyo Semicon Device	SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg
2	16SVP100M	Sanyo Semicon Device	SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg
3	16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
4	OS-CON16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
5	TND516SS	Sanyo Semicon Device	Excellent Power Device • • • • • • • ExPD(Excellent Power Device) Single-phase High Side Drive Application Single-phase high side driver. Monolithic structure. Allows simplified configuration of driver circuit. Withstand voltage of 600V is assured. Fully compatible inpu