| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
1 MEG (131072 words X 8 bits) SRAM |
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Sanyo |
LC324256 |
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Sanyo |
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM |
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Sanyo Semicon Device |
8K x 8 SRAM |
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Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
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Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
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Sanyo |
512K (65536 words X 8 bits) Pseudo-SRAM |
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Sanyo |
64K (8192-word 8-bit) SRAM • Supply voltage range: 2.7 to 5.5 V — In 5-V operation mode: 5.0 V ±10% — In 3-V operation mode: 3.0 V ±10% • Address access time (tAA) — In 5-V operation mode: LC3564B, BS, BM, and BT-70: 70 ns (max) LC3564B, BS, BM, and BT-10: 100 ns (max) — In 3- |
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Sanyo |
64K (8192 words x 8 bits) SRAM s Supply voltage range: 2.0 to 3.6V • 3V operation: 2.7 to 3.6V • Battery operation: 2.0 to 2.4V s High-speed access time • 3V operation - LC3564RM,RT-10LV: 100ns (max) - LC3564RM,RT-12LV: 120ns (max) - LC3564RM,RT-15LV: 150ns (max) • Battery oper |
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Sanyo |
64K (8192 words x 8 bits) SRAM |
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Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM • Low-voltage operation: 3.0 to 3.6 V • Wide operating temperature range: –40 to +85°C • Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U. • Low current drain Standby mode: 0.05 µA (typical*) at Ta = +25°C *: When VCC = 3.0 V 10.0 µA (m |
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Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE • Supply voltage range: 3.0 to 3.6 V • Access time: 70 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) • Operating temperature: –10 to +70°C • Data retention voltage: 2.0 to 3.6 V • All I/O levels: CMOS compatible (0.8 VCC, 0.2 |
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Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) • Operating temperature: –10 to +70°C • Data retention voltage: 2.0 to 3.6 V • All I/O levels: CMOS compatible (0.8 VCC, 0.2 |
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Sanyo |
256 K (32768 words x 8 bits) SRAM |
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Sanyo |
1 MEG (131072 words x 8 bits) Mask ROM • 131072 words × 8 bits organization • Power supply LC371100SP, SM, ST-10: 5.0 V ± 10% LC371100SP, SM, ST-20LV: 2.7 to 3.6 V • Fast access time (tAA, tCA) LC371100SP, SM, ST-10: 100 ns (max.) LC371100SP, SM, ST-20LV: 200 ns (max.) 150 ns (VCC = 3.0 t |
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Sanyo |
2 MEG (262144 words x 8 bits) Mask ROM • 262144 words × 8 bits organization • Power supply LC372100PP, PM, PT-10: 5.0 V ± 10% LC372100PP, PM, PT-20LV: 2.7 to 3.6 V • Fast access time (tAA, tCA) LC372100PP, PM, PT-10: 100 ns (max.) LC372100PP, PM, PT-20LV: 200 ns (max.) 150 ns (VCC = 3.0 t |
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Sanyo |
2 MEG (262144 words x 8 bits) Mask ROM • 262144 words × 8 bits organization • Power supply LC372100PP, PM, PT-10: 5.0 V ± 10% LC372100PP, PM, PT-20LV: 2.7 to 3.6 V • Fast access time (tAA, tCA) LC372100PP, PM, PT-10: 100 ns (max.) LC372100PP, PM, PT-20LV: 200 ns (max.) 150 ns (VCC = 3.0 t |
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Sanyo |
2 MEG (262144 words x 8 bits) Mask ROM • 262144 words × 8 bits organization • Power supply LC372100PP, PM, PT-10: 5.0 V ± 10% LC372100PP, PM, PT-20LV: 2.7 to 3.6 V • Fast access time (tAA, tCA) LC372100PP, PM, PT-10: 100 ns (max.) LC372100PP, PM, PT-20LV: 200 ns (max.) 150 ns (VCC = 3.0 t |
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Sanyo |
Internally Synchronized Silicon Gate 8M (1 /048 /576-word x 8-bit / 524 /288-word x 16-bit) Mask ROM • Supply voltage range: 2.6 to 5.5 V • Access time (tAA): 100 ns (VCC = 4.5 to 5.5 V) (tCA): 110 ns (VCC = 4.5 to 5.5 V) 200 ns (VCC = 2.6 to 5.5 V) • Switchable between 8-bit and 16-bit data path widths Byte mode: 1,048,576 words × 8 bits Word mode: |
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Sanyo Electric |
1-Mbit CMOS RAM |
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