| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sanyo Electric |
2SC5476 |
|
|
|
|
Sanyo Electric |
NPN Planar Silicon Transistor |
|
|
|
|
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2022A [2SC5960] 15.6 14.0 3.2 4.8 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 2.6 1.6 2.0 1.3 20.0 1.2 15.0 20.0 3.5 2.0 0.6 1.0 1 0.6 2 3 |
|
|
|
|
Sanyo Electric |
NPN Epitaxial Planar Silicon Darlington Transistor · High DC current gain. · Large current capacity and wide ASO. · Contains a Zener diode of 95±10V between collector and base. · Uniformity in collector-to-base voltage due to adoption of accurate impurity diffusion process. · High inductive load hand |
|
|
|
|
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor |
|