| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Darlington connection. · High DC current gain. Package Dimensions unit:mm 2084B [2SD2426] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collect |
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Sanyo |
2SD2426 · Darlington connection. · High DC current gain. Package Dimensions unit:mm 2084B [2SD2426] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collect |
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Sanyo Semicon Device |
0.2W Zener Diodes · Reference voltage use. · Votlage regulators use. · Power dissipation : P=200mW. · Voltage range : ±2.5% subdivided. · High reliability due to planar type. · Ideally suited for use in hybrid ICs because of ultra small package. Package Dimensions un |
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