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Sanyo Semiconductor Corporation |
2SD1879 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Æ Low collector-to-emitter saturation voltage. Æ High current and high fT. Æ Excellent linearity of hFE. Æ Fast switching time. Æ Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1 |
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Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
2SD1806 |
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Sanyo Semiconductor |
2SD1817 · High DC current gain. · Small and slim package permitting the 2SD1817applied sets to be made more compact. 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit:mm 2044B [ |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semicon Device |
2SD1878 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semiconductor Corporation |
2SD1816 · Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1216/ |
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Sanyo Semiconductor |
SVPD Series Capacitors ess than an initial standard 125°C, 2,000h, Rated tanδ Endurance 2 times or less than an initial standard voltage applied ESR Leakage current Below an initial standard Within ±20% ∆C/C 85°C, 85 to 90% RH, 2 times or less than an initial standard tanδ |
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Sanyo Semicon Device |
0.2W Zener Diodes · Reference voltage use. · Votlage regulators use. · Power dissipation : P=200mW. · Voltage range : ±2.5% subdivided. · High reliability due to planar type. · Ideally suited for use in hybrid ICs because of ultra small package. Package Dimensions un |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. 1 : Base 2 : Collector 3 : Emitter |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitaing mounting. Package Dimensions unit:mm 2041A [2SB1224/2SD1826] ( ) : 2SB1224 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to- |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1228 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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