| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Electric |
2SC5476 |
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Sanyo Semicon Device |
2SC5478 |
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Sanyo Semicon Device |
2SC5488 · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) Package Dimensions unit:mm 2159 [2SC5488] 1.4 0.3 0.25 3 0.1 0.8 0.2 |
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Sanyo Semicon Device |
2SC5451 · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5451] 3.4 16.0 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20. |
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Sanyo |
2SC5420 • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 2.7 3.0 8.8 1.2 Specifications Absolute Maximum Ratings at Ta=25°C |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5489] 1.4 0.3 0.25 3 0.1 0.8 |
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Sanyo |
2SC5416 • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 Specifications Absol |
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Sanyo |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maxi |
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Sanyo Semicon Device |
NPN TRANSISTOR · High gain : S21e =9.5dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 14.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Para |
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Sanyo Semicon Device |
NPN TRANSISTOR · High gain : S21e =9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Param |
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Sanyo Semicon Device |
NPN TRANSISTOR • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5416] 10.0 3.5 3.2 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 Specifications Absolute |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5444] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specificat |
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Sanyo Electric |
NPN Epitaxial Planar Silicon Darlington Transistor · High DC current gain. · Large current capacity and wide ASO. · Contains a Zener diode of 95±10V between collector and base. · Uniformity in collector-to-base voltage due to adoption of accurate impurity diffusion process. · High inductive load hand |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5453] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolu |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC5450] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5451] 3.4 16.0 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2039D [2SC5452] 3.4 16.0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4. |
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Sanyo |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maxi |
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Sanyo Semicon Device |
NPN TRANSISTOR • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2079B-TO220FI (LS) [2SC5417] 10.0 3.5 3.2 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 Specifications Absolute |
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Sanyo Semicon Device |
NPN TRANSISTOR • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 8.8 1.2 0.8 1 2 3 2.7 0.4 3.0 Specifications Absolute Maximum Ratings |
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