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Sanyo Semicon Device |
2SC4636 · High breakdown voltage (VCEO min=1800V). · Small Cob (typical Cob=1.4pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4636] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 |
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Sanyo Semicon Device |
2SC4632 |
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Sanyo |
2SC4644 · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions |
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Sanyo Semicon Device |
2SC4633 · High breakdown voltage (VCEO min=1200V). · Small Cob (typical Cob=2.0pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4633] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
2SC4696 · Darlington connection. · On-chip Zener diode of 90±10V between collector and base. · High DC current gain. · High inductive load handling capability. 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 4.0 2.45 2.45 Specifications Absolute Maximum Ratings at Ta |
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Sanyo |
2SC4601 · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SC4601-applied equipment. -High density surface mount applications. -Small size of 2SC4601-applied equipment. · High breakdown voltage |
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Sanyo |
2SC4612 · Adoption of MBIT process. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Bas |
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Sanyo |
2SC4637 · High breakdown voltage (VCEO min=1800V). · Small Cob (typical Cob=1.8pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4637] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1 |
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Sanyo |
2SC4645 · Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Package Dimensions un |
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Sanyo Semicon Device |
NPN TRANSISTOR · High breakdown voltage (VCEO min=1200V). · Small Cob (typical Cob=2.0pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4633] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions uni |
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Sanyo |
2SC4615 · Large current capacity (IC=1A). · High breakdown votlage (VCEO≥400V). 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Package Dimensions uni |
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Sanyo |
2SC4616 · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1773 : PNP Eppitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor 2SA1773/2SC4616 High-Voltage Driver Applications Package Dimensions un |
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Sanyo |
2SC4631 · High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=5.0pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4631] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1. |
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Sanyo |
2SC4671 · High DC current gain. · Wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base voltage. · Large inductive load handling capability. Package Dimensions unit:mm 2064 [2SC4671] 2.5 1.45 6.9 1.0 |
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Sanyo |
2SC4695 · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4695- applied sets to be made small and slim. Package Dimensi |
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Sanyo Semicon Device |
2SC4660 |
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Sanyo Semicon Device |
2SC4630 · High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 |
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Sanyo |
2SC4639 |
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