| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SC3331 |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
2SC3393 · Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO=( –)50V. · Complementary pair transistor having large current capacity and high fT. · Adoption of FBET process. Switching Time Test Circuit Package Dim |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · AF amp. · Low-noise use. Noise Test Circuit Package Dimensions unit:mm 2003A [2SA1391/2SC3382] ( ) : 2SA1391 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Sanyo |
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
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Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
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Sanyo |
512K (65536 words X 8 bits) Pseudo-SRAM |
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Sanyo Semiconductor |
2SC3383 · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo |
2SC3361 · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit Package Dimensions unit:mm 2018A [2SA1331/2SC3361] ( ) : 2SA1331 (For PNP, |
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Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
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Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
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Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
|
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Sanyo |
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM |
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Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
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|
|
Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
|
|
|
|
Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
|
|
|
|
Sanyo |
256 K (32768 words X 8 bits) Pseudo-SRAM pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil. CE-only refresh can be accomplished by selecting address 256 (A0 |
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Sanyo |
512K (65536 words X 8 bits) Pseudo-SRAM |
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