| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3038] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3040] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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Sanyo Semicon Device |
2SC3068 · High DC current gain (h FE=800 to 3200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arame |
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Sanyo Semicon Device |
NPN Transistor · High DC current gain (hFE=800 to 3200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
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Sanyo Semicon Device |
2SC3067 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · FBET series. · High fT and small Cre. NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Ba |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3087] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
2SC3094 |
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Sanyo |
2SC3086 · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3086] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3088] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3089] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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Sanyo Semiconductor Corporation |
2SC3070 · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semicon Device |
2SC3069 · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SC3069] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at |
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Sanyo |
2SC3083 · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3083] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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Sanyo |
2SC3088 · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3088] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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Sanyo |
2SC3089 · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3089] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condit |
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