| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
PNP Epitaxial Planar Silicon Transistor • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum R |
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Sanyo |
2SB1388 · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute Maximum Ratings at Ta = 2 |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Packag |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package D |
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Sanyo |
PNP Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Abso |
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Sanyo |
PNP / NPN Epitaxial Planar Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Packag |
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Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Speci |
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Sanyo |
1.0W Zener Diode • Glass sleeve structure. • Voltage regulator, surge absorber applications. • Power dissipation : P=1.0W. • Zener voltage : VZ=3.0 to 36V. • Small-sized package : JEDEC DO-41. 28.0 Package Dimensions unit : mm 1134A [GZB3.0 to 36] C Cathode mar 5. |
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Sanyo Semicon Device |
1.0W Zener Diodes · Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V Package Dimensions unit:mm 1083 [DZB6.2 to DZB30] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Power |
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Sanyo Semicon Device |
PNP Transistor • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity. • Fast switching speed. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum R |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Speci |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute Maximum Ratings at Ta = 2 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1396] Specifications Abso |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. · Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package D |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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