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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute |
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Sanyo Semicon Device |
2SB1204 |
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Sanyo |
2SB1205 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SB1205-applied sets smaller. Package Dimensions unit:mm 2045B [2SB1205] unit:mm 2044B |
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Sanyo |
2SB1228 · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1228 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25 |
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Sanyo Semicon Device |
2SB1225 |
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Sanyo Semiconductor |
2SB1203 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Package Dimensions unit:mm 2045B [ |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. Package Dimensions unit:mm 2033 [2SB1296/2SD1936] ( ) : 2SB1296 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Ba |
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Sanyo Semicon Device |
2SB1202 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. Package Dimensions |
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Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors • Large current capacity and wide ASO. • Low saturation voltage. Specifications ( ) : 2SB1230 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector C |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitaing mounting. Package Dimensions unit:mm 2041A [2SB1224/2SD1826] ( ) : 2SB1224 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emi |
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Sanyo Semiconductor Corporation |
2SB1201 · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions u |
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Sanyo Semicon Device |
2SB1232 · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1232 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Vo |
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Sanyo |
2SB1235PNP/NPN Epitaxial Planar Silicon Transistors · AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Package Dimensions unit:mm 2033 [2SB1235/2SD1852] ( ) : 2SB1235 Specif |
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Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1271/2SD1907] ( ) : 2SB1271 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet |
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Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1270/2SD1906] ( ) : 2SB1270 Specifications E : Emitter C : Collector B : Base SANYO :TO-2 |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Package Dimensions unit:mm 2003A [2SB |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute |
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