| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
2SA1433 · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo |
2SA1416 · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 |
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Sanyo |
2SA1418 · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1418/2SC3648] 4 |
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Sanyo |
2SA1450 · Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications Absolute Maximum Ratings at Ta |
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Sanyo Semiconductor |
(LA1463 / LA1464) |
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Sanyo |
PNP/NPN Silicon Transistor |
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Sanyo |
2SA1415 · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 |
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Sanyo |
2SA1437 · Very small-sized package permitting sets to be made smaller and slimer. · Adoption of FBET process. · High DC current gain : (hFE=400 to 1000). · High breakdown voltage : (VCEO≥100V). · Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V). |
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Sanyo |
2SA1435 · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Abs |
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Sanyo Semicon Device |
2SA1479 · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic : Cre=1.8pF (typ). · Adoption of MBIT process. · No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes. · |
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Sanyo |
2SA1403 · High fT : fT typ=800MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF (NPN), 4.6pF (PNP). · Complementary pair with the 2SA1403/2SC3597. · Adoption of FBET procss. Package Dimensions unit:mm 2009B |
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Sanyo |
2SA1475 · High fT (fT typ=500MHz). · High breakdown voltage (VCEO≥120V). · Small reverse transfer capacitance and excellent HF response : Cre=2.6pF (NPN), 3.9pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. Package Dimensions unit:mm |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation votlage. · Excellent dependence of hFE on current. · Fast switching time. · Micaless package facilitating mounting. ( ) : 2SA1470 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT (fT typ=400MHz). · High breakdown voltage (VCEO≥200V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.1pF (NPN), 2.6pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · Excellent linearity of hFE. · Small Cob. · Plastic-convered heat sink facilitating high-density mounting (TO-126ML package). Package Dimensions unit:mm 2042B [2SA1477/2SC3787] 8.0 4.0 1.0 1.0 3.3 3.0 1.6 0.8 1.5 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 |
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Sanyo Semiconductor |
(LA1463 / LA1464) |
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Sanyo Semiconductor |
LA1460 |
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Sanyo Semiconductor Corporation |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. · Micaless package facilitating mounting. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-220ML ( ) : 2SA1469 Specifications Absolute Maximum Ratings at Ta = 25 |
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