| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≤200V. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2. |
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Sanyo Semicon Device |
MONOLITHIC LINEAR IC |
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Sanyo |
Vertical Deflection Circuit of B/W TV |
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Sanyo Semiconductor |
(LA1352 / LA1353) VIF |
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Sanyo |
2SA1370 · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1370 Spec |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo |
MONOLITHIC LINEAR |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
2SA1371 |
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Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
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Sanyo |
LA1342 |
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Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, the polarity is revers |
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Sanyo Semicon Device |
(LA1362 - LA1365 / LA1357) MONOLITHIC LINEAR IC |
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Sanyo Semiconductor |
LA1362 / VTR |
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Sanyo |
LA1385 / Japanese |
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Sanyo Electric |
Video Pack / Video Output Amplifiers |
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