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Sanyo |
LE25FV055T 5 56 63 64 71 FFH Add. Add. Add. X X High Impedance N N+1 N+2 DATA DATA DATA MSB MSB MSB LE25FV055T CS SCK SI SO 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 23 24 31 9FH High Impedance MSB DATA DATA DATA MSB MSB CS SCK SI SO 0 1 2 3 4 5 6 |
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Sanyo Electric |
LE25FV051T CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral |
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Sanyo |
LE25FV101T CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations .DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max.) High Read/Write Reliability Sector-write |
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Sanyo Semicon Device |
CMOS IC 2M-bit (256K X 8) Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
CMOS IC 1M-bit (128K X 8) Serial Flash Memory inherent to a serial flash memory device, the LE25FU106B is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU106B has maximally eliminated this speed-rela |
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Sanyo |
512K-bit (64K x 8) Serial Flash Memory 5 56 63 64 71 FFH Add. Add. Add. X X High Impedance N N+1 N+2 DATA DATA DATA MSB MSB MSB LE25FV055T CS SCK SI SO 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 23 24 31 9FH High Impedance MSB DATA DATA DATA MSB MSB CS SCK SI SO 0 1 2 3 4 5 6 |
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Sanyo Semicon Device |
Lamp-/ solenoid-/ and motor-driving Applications · N-channel MOSFET built in. · Overheat protection. · Overcurrent protection. · Overvoltage protection. Package Dimensions Unit:mm 2154 [TND025F] 10.5 1.9 4.5 1.2 Package Dimensions Unit:mm 2145 [TND025MP] 2.6 1.4 6.0 5.0 4.7 1.0 8.5 0.5 0.6 7. |
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Sanyo Semicon Device |
4M-bit Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
4M-bit (512K X 8) Serial Flash Memory • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 50MHz • Temperature range : 0 to +70°C,-40 to 85°C(Planning) Continued on next page. * This product is licensed from Silicon Storag |
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Sanyo Electric |
512K Serial Flash EEPROM CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral |
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Sanyo Electric |
1M Serial Flash EEPROM t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-time |
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Sanyo Semicon Device |
CMOS IC 8M-bit (1M X 8) Serial Flash Memory inherent to a serial flash memory device, the LE25FW806 is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FW806 has maximally eliminated this speed-relate |
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Sanyo Semicon Device |
8M-bit (1024K X 8) Serial Flash Memory LE25FW808 is the best suited for applications in the portable electronic devices, that require re-programmable nonvolatile storage of program memory. LE25FW808 has also the High-Density read mode (hereafter, HD_READ mode) that is the most high-speed |
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Sanyo Semicon Device |
2M-bit Serial Flash Memory inherent to a serial flash memory device, the LE25FU206 is housed in an 8-pin ultraminiature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU206 has maximally eliminated this speed-related |
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Sanyo Semicon Device |
CMOS IC 4M-bit (512K X 8) Serial Flash Memory inherent to a serial flash memory device, the LE25FU406B is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU406B has maximally eliminated this speed-rela |
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Sanyo Semicon Device |
4M-bit (512K X 8) Serial Flash Memory inherent to a serial flash memory device, the LE25FS406 is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to h |
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