| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg |
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Sanyo Semicon Device |
SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg |
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Sanyo Semicon Device |
SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde |
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Sanyo Semicon Device |
SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde |
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Sanyo |
Large Capacitance ,000h, Rated Endurance ESR 1.5 times or less than an initial standard voltage applied Leakage current Below an initial standard ∆C/C Within ±20% 60°C, 90 to 95%RH, tanδ 1.5 times or less than an initial standard Damp heat (Steady state) 1,000h, ESR 1 |
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Sanyo Semiconductor |
SEP Series Standard radial lead type Capacitor 5°C 0.75 to 1.25 Z / Z 20°C +105°C ∆C/C Within ±20% tanδ 1.5 times or less than an initial standard ESR 1.5 times or less than an initial standard Leakage current Below an initial standard ∆C/C Within ±20% tanδ 1.5 times or less than an initial stand |
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Sanyo Semicon Device |
Excellent Power Device • • • • • • • ExPD(Excellent Power Device) Single-phase High Side Drive Application Single-phase high side driver. Monolithic structure. Allows simplified configuration of driver circuit. Withstand voltage of 600V is assured. Fully compatible inpu |
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Sanyo Semiconductor |
SVPD Series Capacitors ess than an initial standard 125°C, 2,000h, Rated tanδ Endurance 2 times or less than an initial standard voltage applied ESR Leakage current Below an initial standard Within ±20% ∆C/C 85°C, 85 to 90% RH, 2 times or less than an initial standard tanδ |
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Sanyo Semiconductor |
Aluminum Solid Capacitors less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initial standard Leakage current Within ±20% ∆C/C 1.5 times or less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initi |
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Sanyo Semiconductor |
Aluminum Solid Capacitors less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initial standard Leakage current Within ±20% ∆C/C 1.5 times or less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initi |
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Sanyo |
General Purpose Driver • Inverter buffer. • Monolithic structure (High voltage CMOS process adopted). • Withstand voltage of 25V is assured. • Wide range of operating voltage : 4.5V to 25V. • Peak output current : 1A. • Fast switching time (30ns typical at 1000pF load). • |
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