| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken electric |
2SD1769 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 5m A mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 20 |
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Sanken electric |
2SD1796 1.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m A 1.0m A 0 .8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s |
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Sanken electric |
2SD1785 3.9 B C E ±0.2 I C – V CE Characteristics (Typical) A 5m A 3m A 2mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 A 20 1 0m |
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Sanken electric |
Silicon NPN Transistor 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 5m A mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 20 |
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Sanken electric |
Silicon NPN Transistor 3.9 B C E ±0.2 I C – V CE Characteristics (Typical) A 5m A 3m A 2mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 A 20 1 0m |
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Sanken electric |
Silicon NPN Triple Diffused Planar Transistor E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m A 1.0m A 0 .8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V B |
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