| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Silicon NPN Triple Diffused Planar Transistor .4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 1A I C – V CE Characteristics (Typical) 15 700mA 500mA 300mA 200mA 10 100mA 5 50mA IB=20mA 0 0 12 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation |
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Sanken Electric |
Silicon NPN triple diffusion planar type Transistor |
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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Silicon NPN Transistor ristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 7 200 mA V CE ( sat ) – I B Characteristics (Typical) 2.6 I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 150 mA mA 6 100 6 Collector Current I C (A) 2 Coll |
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Sanken electric |
Silicon NPN Transistor cs (Typical) 7 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) |
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Sanken electric |
Silicon NPN Transistor x 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 A .2 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B |
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Sanken electric |
Silicon NPN Epitaxial Planar Transistor ypical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 4 V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 4 (V C E =4V) 0m 60 m A 50mA IB =7 A Collector Current I C (A) 3 30mA Collector Cu |
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Sanken electric |
Silicon NPN Triple Diffused Planar Transistor aracteristics (Typical) 5A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 17 15 (V CE =4V) 17 15 1. 1A 7 m 00 A m 500 A 300m Collector Cu |
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Sanken electric |
Silicon NPN Transistor 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) IB=70mA I C – V CE Characteristics (Typical) 4 60mA 50mA 40mA 3 30mA 20mA 2 10mA 1 5mA 0 |
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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Silicon NPN Transistor ±0.2 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +-00..12 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) I C – V CE Characteristics (Typical) 3 IB=12mA 8mA 5mA 2 3mA 2mA 1 1mA 0.5mA 0 0 |
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Sanken electric |
Silicon NPN Transistor cs (Typical) 7 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) |
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Sanken electric |
Silicon NPN Transistor x 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 A .2 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B |
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Sanken electric |
Silicon NPN Transistor C – V CE Characteristics (Typical) 6 1A 80 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) (I C /I B =5) 2 I C – V BE Te |
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Sanken electric |
Silicon NPN Transistor 05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) I C – V CE Characteristics (Typical) 7 200mA 150mA 6 100mA 5 60mA 4 40mA 3 20mA 2 IB= |
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Sanken electric |
Silicon NPN Transistor 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) IB=70mA I C – V CE Characteristics (Typical) 4 60mA 50mA 40mA 3 30mA 20mA 2 10mA 1 5mA 0 |
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Sanken electric |
Silicon NPN Transistor 1.8typ 0.6typ 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 1A I C – V CE Characteristics (Typical) 15 700mA 500mA 300mA 200mA 10 100mA 5 50mA IB=20mA 0 0 1 2 3 4 Collector-Emit |
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Sanken electric |
Silicon NPN Transistor CE Characteristics (Typical) 5A 1. 1A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V C E =4V) 15 6 m 00 A 400m A Collector Current |
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Sanken Electric |
Silicon NPN Transistor |
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