| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken electric |
Silicon PNP Transistor .2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +-00..12 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 2.0g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) IB= –2.3mA I C – V CE Characteristics (T |
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Sanken electric |
Silicon PNP Transistor 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –50mA I C – V CE |
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Sanken electric |
2SB1258 6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3. – 4 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V |
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Sanken electric |
Silicon PNP Transistor 6typ tf (µs) 0.5typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3. – 4 2. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V |
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