| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken electric |
2SA1386A µs) 0.7typ tf (µs) 0.2typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature |
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Sanken electric |
Silicon PNP Transistor ● Complementary to 2SC3519 ● LAPT (Linear Amplifier Power Transistor) ● High Transition Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO----------------------------------------------------−160 V ● IC--------------------------------------- |
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Sanken electric |
Silicon PNP Transistor 0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) – –760000mmAA I C – V CE Characteristics (Typical) –12 – 5 00 mA –4 00 mA –300mA –200mA –150mA –100mA –8 –50mA |
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Sanken electric |
2SA1303 . Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A A m m mA 00 00 00 –3 –5 –4 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) (V C |
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Sanken electric |
Silicon PNP Transistor ● Complementary to 2SC3519A ● LAPT (Linear Amplifier Power Transistor) ● High Transition Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO----------------------------------------------------−180 V ● IC-------------------------------------- |
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Sanken electric |
Schottky Barrier Diodes 30V |
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