| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken Electric |
2SK3332 3.4V 10 3.2V 8 e6 3.0V RDS (ON) (mΩ) ID (A) ID (A) e4 2.8V h2 2.6V VGS = 2.4V 0 S0 2 4 6 8 10 VDS (V) ataRe(yfs) – ID Characteristics (typical) 50 TC = – 55°C .D25°C 10 125°C VDS =10V VDS (V) w1 w0.1 w0.05 0.1 0.5 1 5 10 20 RDS (ON) |
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Sanken Electric |
Transistor DS (V) Re (yfs) – I D Characteristics (typical) 50 TC = – 55°C 25°C 125°C VDS =10V 10 1 0.1 0.05 0.1 0.5 1 I D (A) w 5 w 10 20 w 12 10 8 RDS (ON) (mΩ) Re (yfs) (S) VDS (V) .D 10 8 6 4 2 0 VDS – VGS Characteristics (typical) t a 1 S a |
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Sanken Electric |
2SK2943 haracteristics (typical) 5 VGS =10V 4 RDS (ON) (Ω) 25°C – 55°C 2.0 4.8V 2.0 I D (A) I D (A) 3 2 1.5 1.0 0.5 0 TC =125°C 4.5V 1.0 1 0 VGS = 4V 0 0 5 10 15 20 0 2 4 6 8 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS (V) VGS (V) I D (A) Re (y |
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Sanken electric |
2SK2421 yfs) (S) ID — Re (yfs) Characteristics 50 VDS = 10V 10 5 1 0.5 0.1 TC = – 55ºC 25ºC 125ºC 0.5 1 5 10 ID (A) 50 VDS (V) VGS — VDS Characteristics 2 1 0 45 ID = 40A ID =20A 10 VGS (V) 20 Capacitance (pF) VDS — Capacitance Characteristics |
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Sanken electric |
MOSFET 10 20 30 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 50 TC = – 55ºC 25ºC 125ºC VDS = 10V 2 VGS — VDS Characteristics 40 TC — RDS (ON) Characteristics ID = 15A VGS =10V Re (yfs) (S) 10 5 RDS (ON) (mΩ) 30 VDS (V) 1 ID = 30A 2 |
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Sanken electric |
MOSFET (A) I D (A) 6 4 6 4 2 0 TC = –55ºC 25ºC 125ºC RDS (ON) (Ω) 4 6 8 0.6 0.4 0.2 0 0 2 4 6 8 10 VGS = 4.5V 2 0 0 5 10 15 20 0 2 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 20 10 TC = – 55ºC 25ºC 125ºC 10 VDS = 20V 8 6 VGS — V |
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Sanken electric |
MOSFET I D (A) I D (A) 10 8 6 4 2 0 0 5 10 VGS = 4V 15 20 4.5V 10 8 6 4 2 0 0 2 4 TC = – 55ºC 25ºC 125ºC 6 8 RDS (ON) (Ω) 12 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 30 VDS = 20V 10 TC |
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Sanken electric |
N-Channel MOSFET 1.0 0.5 0 0 4.5V VGS = 4V 5 10 15 20 VDS (V) ID – VGS Characteristics (typical) 2.0 VDS = 20V 1.5 ID (A) 1.0 0.5 0 0 TC = –55ºC 25ºC 125ºC 2 4 6 8 VGS (V) RDS(ON) – ID Characteristics (typical) 4 3 VGS = 10V RDS (ON) (Ω) 2 1 |
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Sanken electric |
2SK1191 10 20 30 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 50 TC = – 55ºC 25ºC 125ºC VDS = 10V 2 VGS — VDS Characteristics 40 TC — RDS (ON) Characteristics ID = 15A VGS =10V Re (yfs) (S) 10 5 RDS (ON) (mΩ) 30 VDS (V) 1 ID = 30A 2 |
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Sanken electric |
2SK1181 = 4V 20 2 0 0 2 4 6 8 10 12 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 20 10 TC = – 55ºC 25ºC 125ºC VDS = 10V 10 8 VGS — VDS Characteristics 1.0 0.8 TC — RDS (ON) Characteristics ID = 6.5A VGS =10V Re (yfs) (S) 5 RDS (ON) |
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Sanken electric |
2SK3711 • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Package—TO3P ■Applications • Electric power steering • High current switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25°C |
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Sanken electric |
MOSFET 1 2 3 4 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 10 VDS = 10V 5 TC = – 55ºC 25ºC 125ºC 8 10 VGS — VDS Characteristics 5 4 ID =4A TC — RDS (ON) Characteristics ID = 2A VGS =10V 6 4 RDS (ON) (Ω) Re (yfs) (S) VDS (V) 3 2 1 2 |
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Sanken electric |
MOSFET = 4V 20 2 0 0 2 4 6 8 10 12 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 20 10 TC = – 55ºC 25ºC 125ºC VDS = 10V 10 8 VGS — VDS Characteristics 1.0 0.8 TC — RDS (ON) Characteristics ID = 6.5A VGS =10V Re (yfs) (S) 5 RDS (ON) |
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Sanken electric |
MOSFET 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 10 VDS = 10V 5 TC = – 55ºC 25ºC 125ºC 6 8 VGS — VDS Characteristics 2.0 TC — RDS (ON) Characteristics ID = 2.5A VGS =10V RDS (ON) (Ω) |
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Sanken electric |
MOSFET .2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 10 VDS = 10V 5 6 VGS — VDS Characteristics 1.2 1.0 TC — RDS (ON) Characteristics ID = 2.5A VGS =10V RDS (ON) (Ω) Re (yfs) (S) VD |
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Sanken electric |
MOSFET 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 10 VDS = 10V 5 TC = – 55ºC 25ºC 125ºC 6 VGS — VDS Characteristics 0.5 0.4 TC — RDS (ON) Characteristics ID = 4.5A VGS =10V RDS (ON) (Ω) Re (yfs) ( |
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Sanken electric |
MOSFET 24 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 50 TC = – 55ºC 25ºC 125ºC VDS = 10V 4 VGS — VDS Characteristics 80 TC — RDS (ON) Characteristics ID = 12A VGS =10V Re (yfs) (S) 10 5 3 RDS (ON) (mΩ) ID = 22A ID = 12A 3 5 10 20 60 |
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Sanken electric |
MOSFET ) (mΩ) 20 10 0 0 10 20 30 40 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 50 TC = – 55ºC 25ºC 125ºC VDS = 10V 2 VGS — VDS Characteristics 40 TC — RDS (ON) Characteristics ID = 20A VGS =10V 30 Re (yfs) (S) 10 5 RDS (ON) (mΩ) |
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Sanken electric |
MOSFET D (A) 5V 1 4.5V 4V 0 0 10 20 I D (A) 1 0 0 1 2 3 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 5 3 TC = – 55ºC 25ºC 125ºC VDS = 20V 20 VGS — VDS Characteristics 12 10 15 TC — RDS (ON) Characteristics ID = 1.5A VGS =10V RDS (ON) |
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Sanken electric |
MOSFET cs VGS = 10V I D (A) I D (A) 8 6 4 2 0 0 5 10 8 6 4 2 TC = – 55ºC 25ºC 125ºC RDS (ON) (Ω) 4 6 8 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 13 4.5V VGS = 4V 15 20 0 0 2 VDS (V) VGS (V) I D (A) I D — Re (yfs) Characteristics 20 10 TC = – 55ºC 25ºC |
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