| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sanken |
Power Transistor 3 10.0 –0.5 8.6±0.3 10.2±0.3 4.44±0.2 1.3±0.2 a b 2.54±0.5 1.6 1.27±0.2 +0.2 0.86 –0.1 1.2±0.2 2.54±0.5 (1.5) +0.2 0.1 –0.1 0.4±0.1 a) Part No. b) Lot No. (Unit: mm) +0.3 3.0 –0.5 ■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VB |
|
|
|
|
Sanken |
Power Transistor 5 1 5 10 IB (mA) 50 100 200 0 0 1.0 2.0 2.4 VBE (V) ■ hFE — IC Characteristics (typ.) 10000 5000 1000 500 hFE 100 50 10 0.02 0.1 0.5 1 IC (A) (VCE = 2V) Typ 5 10 ■ hFE — IC Temperature Characteristics (typ.) 10000 (VCE = 2V) 5000 125ºC |
|