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MOSFET z z Low on-state resistance Built-in gate protection diode Package MT100 (TO3P) Feb. 2011 Applications z z Electric power steering High current switching Key Specifications z z V(BR)DSS=60V (ID=100μA) RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A) Internal |
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Sanken |
Fast Recovery Diode ● VRM------------------------------------------------------ 600 V ● IF(AV)------------------------------------------------------- 20 A ● VF--------------------------------------------------------- 1.7 V ● trr1 ---------------------------------------- |
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