| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanken electric |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)-----------------------------------------------------10 A ● VF (IF = 5 A) ------- |
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Sanken electric |
Schottky Barrier Diodes 110 120 130 140 150 0 1 5 10 50 Lead Temperature T (°C) Overcurrent Cycles External Dimensions (Unit: mm) Flammability: UL94V-0 or Equivalent Fig. A 10.0 3.3 4.0 8.4 4.2 2.8 C0.5 3.9 0.8 2.2 16.9 2.6 1.35 1.35 0.85 2.54 2.54 (13.5) |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM------------------------------------------------------ 80 V ● IF(AV)----------------------------------------------------- 30 A ● VF (IF = 15 A) ---- |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 150 V ● IF(AV)----------------------------------------------------- 30 A ● VF (IF = 15 A) ----- |
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Sanken |
Trench Schottky Diode FMET-22010 is 100 V / 20 A Schottky Diode of the Trench structure and has the improved characteristics of VF and IR. These characteristics realize the improving of power supply efficiency, and the high frequency system. ● VRM------------------------- |
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Sanken electric |
100V 20A Schottky barrier diode ) VR –PR Characteristic Tj =150ºC t T VR – IR Characteristic (Typ.) 100 10 Reverse current IR (mA) 1 0.1 0.01 0.001 60°C 125°C 100°C Average forward current IF(AV) (A) Ta=150°C 20 TC –IF(AV) Characteristic Sinewave VR =100V 1 – t /T=1/2 1 –t /T=1/ |
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Sanken electric |
100V 30A Schottky barrier diode teristic Tj =150ºC t T VR – IR Characteristic (Typ.) 100 10 Reverse current IR (mA) 125°C 100°C 1 0.1 0.01 0.001 60°C Average forward current IF(AV) (A) Ta=150°C 30 25 TC –IF(AV) Characteristic Sinewave 1 – t /T=1/2 t T VR =100V Tj =150ºC Reverse |
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Sanken electric |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 150 V ● IF(AV)----------------------------------------------------- 20 A ● VF (IF = 10 A) ----- |
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Sanken electric |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM-------------------------------------------------------- 80 V ● IF(AV)------------------------------------------------------- 20 A ● VF (IF = 10 A) |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)----------------------------------------------------- 30 A ● VF (IF = 15 A) ----- |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)-----------------------------------------------------10 A ● VF (IF = 5 A) ------- |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)-----------------------------------------------------30 A ● VF (IF = 15 A) ------ |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 150 V ● IF(AV)----------------------------------------------------- 10 A ● VF (IF = 5 A) ------ |
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Sanken |
Trench Schottky Diode ● VRM------------------------------------------------------ 100 V ● IF(AV)------------------------------------------------------- 40 A ● VF (125 °C, IF = 10 A) -------------------------- 0.57 V typ ● RoHS Compliant Application The high speed switchin |
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Sanken |
Trench Schottky Diode ● VRM------------------------------------------------------ 100 V ● IF(AV)------------------------------------------------------- 30 A ● VF (125 °C, IF = 7.5 A)-------------------------- 0.57 V typ ● RoHS Compliant Application The high speed switchin |
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Sanken |
Trench Schottky Diode FMET-21510 is 100 V / 15 A Schottky Diode of the Trench structure and has the improved characteristics of VF and IR. These characteristics realize the improving of power supply efficiency, and the high frequency system. ● VRM------------------------- |
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Sanken electric |
Schottky Barrier Diodes 110 120 130 140 150 0 1 5 10 50 Lead Temperature T (°C) Overcurrent Cycles External Dimensions (Unit: mm) Flammability: UL94V-0 or Equivalent Fig. A 10.0 3.3 4.0 8.4 4.2 2.8 C0.5 3.9 0.8 2.2 16.9 2.6 1.35 1.35 0.85 2.54 2.54 (13.5) |
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Sanken electric |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)----------------------------------------------------- 20 A ● VF (IF = 10 A) ----- |
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Sanken |
Schottky Diode ● VRSM ---------------------------------------------------- 100 V ● IF(AV)------------------------------------------------------- 30 A ● VF (IF = 15 A) ---------------------------------- 0.81 V typ. ● Bare Lead Frame: Pb-free (RoHS Compliant) ● Flamm |
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Sanken |
Schottky Diode contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRM---------------------------------------------------- 100 V ● IF(AV)-----------------------------------------------------40 A ● VF (IF = 20 A) ------ |
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