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Samwin |
N-Channel MOSFET N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to hav |
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Samwin |
N-Channel MOSFET N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W SW634 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to ha |
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Samwin |
N-Channel MOSFET N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to |
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Samwin |
N-channel MOSFET High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, PC Power, Charger TO-220F TO-252 TO-251N 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General De |
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Samwin |
N-channel MOSFET TO-220F TO-252 TO-251N High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 23nC) Improved dv/dt Capability 100% Avalanche Tested Application: UPS,Inverter,TV-POWER 12 3 123 123 1. Gate 2. Drain 3. Source General Des |
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