| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung semiconductor |
ENHANCED-1 CHIP CT0 RF IC • • • • • • • Operating voltage range: 2.0V ~ 5.5V Typical supply current: 8.9mA at 3.6V Built-in low battery detection function ( selectable 3.45V, 3.3V, 3.0V, 2.2V, 2.1V ) Built-in speaker volume control and speaker amplifier Built-in splatter filt |
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Samsung semiconductor |
UNIVERSAL SPEECH NETWORK • • • • • • • Independent adjustment of DC resistance and AC impedance. ECM or dynamic microphone can be used. DTMF signal interface. Mute function Operates at the low line voltage (1.6V) Low or high impedance receiver type can be used. Low line curr |
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Samsung semiconductor |
TONE RINGER • Built-in full wave bridge diode rectifier • Low current consumption, in order to allow the parallel operation of 4 devices • Few external components • Tone and adjustable switching frequencies by external components • High noise immunity to current |
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Samsung semiconductor |
SPEECH NETWORK WITH DIALER INTERFACE • • • • • Adjusts sending and receiving attenuation length Regulated voltage output for external dialer Linear interface for DTMF Suitable for ceramic transducers Mute function ORDERING INFORMATION Device S1T8501X01-D0B0 Package 16−DIP−300A Operatin |
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Samsung semiconductor |
FM IF RECEIVER FOR FLEX PAGER • • • • • • • Internal A/D converter for 4 level FSK (2-bit ADC) High transmission rate: 6400bps (Max.) Operating voltage range: VCC1 = 1.1 ~ 4.0V Typical supply current: 1.5mA at 1.4V Low battery detection circuit (alarm function): 1.05V Mixer opera |
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Samsung semiconductor |
1 CHIP CLP SUBSYSTEM IC • • • • • • • Operating voltage range: 2.0V — 5.5V Typical supply current: 13.5mA at 3.6V Built−in low battery detection function ( selectable 3.45V, 3.3V, 3.0V, 2.2V, 2.1V ) Built−in speaker amplifier Built−in splatter filter Built−in dual conversio |
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Samsung semiconductor |
compander - automatic gain control system • Wide Supply Voltage ( 2.4 to 7V ) • Easy Gain Control • Mute/Bypath Logic • Data In/Out Pin 20−SOP−375 ORDERING INFORMATION Device S1T8507C01-D0B0 S1T8507C01-S0B0 Package 20−DIP−300A 20−SOP−375 Operating Temperature −20°C to +70°C S1T8507C 1 |
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Samsung semiconductor |
1.3GHZ DUAL PLL • • • • • • • • • Two systems for receiver and transmitter Very low operating current consumption: Icc = Typ. 7.0mA @ 3.0V Low operating power supply voltage : 2.2 to 5.5V ( 200MHz to 550MHz Operating ) 2.7 to 3.6V ( 550MHz to 1.3GHz Operating ) Modu |
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Samsung semiconductor |
FM IF RECEIVER • • • • • • • • Operating voltage range: 1.0 ~ 4.0V Typical supply current: 1.1mA at 1.4V Low battery detection circuit (alarm function): 1.05V Voltage regulator : Vreg = 1.0V (Typ.) Mixer operating frequency: 10 ~ 50MHz High transmitting rate: 1200 |
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Samsung semiconductor |
LOW VOLTAGE AUDIO AMPLIFIER • • • • • • • • Wide Supply Voltage (2 ~ 16V) Low Quiescent Supply Current (ICC = 2.7mA : Typ) Easy Gain Control Medium Output Power PO = 250mW at VCC = 6V, RL = 32Ω, THD = 10% Minimum External Parts Various Load Impedance Range (8Ω ∼ 100Ω) Low Disto |
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Samsung semiconductor |
1.1GHZ DUAL PLL • • • Two systems for receiver and transmitter Very low operating current consumption: Icc = Typ. 5.5mA @ 3.0V Low operating power supply voltage : 2.2 ~ 5.5V ( 200MHz ~ 550MHz Operating ) 2.7 ~ 3.6V ( 550MHz ~ 1.1GHz Operating ) • • • • • • Modulus |
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Samsung semiconductor |
S1T8531X01 • • • • • • • Operating voltage range Typical supply current : 2.2 to 5.5V : 5.5mA at 3.6V Operating frequency range : 2MHz to 40MHz High Gain (100dB) and Wideband (2MHz to 40MHz) IF Amplifier Quadrature Demodulator with Greater than 1MHz Bandwidth |
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Samsung semiconductor |
bipolar integrated circuit designed as a telephone bell replacement • • • • • • • • • • Designed for telephone bell replacement Low drain current Small size MINIDIP package Adjustable 2-frequency tone Adjustable warbling rate Built-in hysteresis prevents false triggering and rotary dial ‘CHIRPS’ Extension tone ringer |
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Samsung semiconductor |
bipolar integrated circuit designed as telephone bell replacement • • • • • • • • • • Designed for telephone bell replacement Low drain current Small size MINIDIP package Adjustable 2-frequency tone Adjustable warbling rate Built-in hysteresis prevents false triggering and rotary dial ‘CHIRPS’ Extension tone ringer |
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Samsung semiconductor |
TONE RINGER • • • • • • • • Built-in full wave bridge diode rectifier Low current consumption, in order to allow the parallel operation of 4 devices Few external components Tone and adjustable switching frequencies by external components High noise immunity to c |
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Samsung semiconductor |
SPEECH NETWORK WITH DIALER INTERFACE • • • • • • Low voltage operation (1.5V : speech) Transmit, Receive, Side tone and DTMF level are controlled by external resistors Regulated voltage for dialer Loop length equalization MUTE function Linear interface for DTMF ORDERING INFORMATION Dev |
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Samsung semiconductor |
LOW VOLTAGE/POWER NARROW BAND FM IF • • • • Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components required. Operating Voltage: 2.5 to 7.0V 16−SOP−225A APPLICATIONS • • Cordless phone (for home |
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Samsung semiconductor |
LOW VOLTAGE/POWER NARROW BAND FM IF • • • • Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components required. Operating Voltage: 2.5 to 7.0V 16−SOP−225A APPLICATIONS • • Cordless phone (for home |
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Samsung semiconductor |
WIDEBAND FM/FSK IF RECEIVER • • • • • • • Operating voltage range Typical supply current : 2.2 to 5.5V : 5.5mA at 3.6V Operating frequency range : 2MHz to 40MHz High Gain (100dB) and Wideband (2MHz to 40MHz) IF Amplifier Quadrature Demodulator with Greater than 1MHz Bandwidth |
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