Samsung semiconductor K8D fiche technique

No.	Partie #	Fabricant	Description
1	K8D638UBM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
2	K8D6316UBM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
3	K8D6316UTM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
4	K8D638UTM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
5	K8D1716UBC	Samsung semiconductor	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
6	K8D1716UTC	Samsung semiconductor	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod