Samsung K8D fiche technique

No.	Partie #	Fabricant	Description
1	K8D638UBM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
2	K8D3216UT	Samsung	32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory GENERAL DESCRIPTION • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architect
3	K8D1716U	Samsung	16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
4	K8D6316UBM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
5	K8D6316UTM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
6	K8D638UTM	Samsung semiconductor	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 :
7	K8D1716UTB	Samsung	16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
8	K8D1716UBB	Samsung	16M Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
9	K8D1716UBC	Samsung semiconductor	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
10	K8D1716UTC	Samsung semiconductor	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
11	K8D1716UTC	Samsung Electronics	16M-Bit Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
12	K8D1716UBC	Samsung Electronics	16M-Bit Dual Bank NOR Flash Memory • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Cod
13	K8D3216UB	Samsung	32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory GENERAL DESCRIPTION • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architect
14	K8D3216U	Samsung	32M-Bit (4M x8/2M x16) Dual Bank NOR Flash Memory GENERAL DESCRIPTION • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architect