| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung |
Power MOSFET OGHULQJ 3XUSRVHVñýýìîå§ýIURPýýFDVHýýIRUýýèðVHFRQGV %9'66ýý ýýéííý9 5'6õRQôýý ýýìïí : ,'ýý ýýèïèý$ ë ì ê ì ë ê ìïý*DWHýýëïý'UDLQýýêïý6RXUFH 9DOXH éíí èïè êïè ëë B êéç èïè æïê éïí êïì æê íïèå ðýèèýýWRýýòìèí êíí 8QLWV 9 $ $ 9 |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung |
(IRF9Z24) P Channel Power MOSFET |
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Samsung |
Power MOSFET 6ROGHULQJ 3XUSRVHVñýýìîå§ýIURPýýFDVHýýIRUýýèðVHFRQGV %9'66ýý ýýéííý9 5'6õRQôýý ýýìïå : ,'ýý ýýêïêý$ ë ì ê ì ë ê ìïý*DWHýýëïý'UDLQýýêïý6RXUFH 9DOXH éíí êïê ëïì ìê B ëéä êïê éïä éïí êïì éä íïêä ðýèèýýWRýýòìèí êíí 8QLWV 9 $ $ |
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Samsung |
Power MOSFET 3XUSRVHVñýýìîåý¦ýýIURPýýFDVHýýIRUýýèðVHFRQGV %9'66ýý ýýëííý9 5'6õRQôýý ýýìïè : ,'ýý ýýêïêý$ ë ì ê ì ë ê ìïý*DWHýýëïý'UDLQýýêïý6RXUFH 9DOXH ëíí êïê ëïì ìí B éé êïê êïå èïí êïì êå íïêì ðýèèýýWRýýòìèí êíí 8QLWV 9 $ $ 9 P$ P9î |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
(IRFP130 - IRFP133) N-CHANNEL POWER MOSFETS |
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Samsung semiconductor |
(IRFP130 - IRFP133) N-CHANNEL POWER MOSFETS |
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Samsung semiconductor |
(IRFP130 - IRFP133) N-CHANNEL POWER MOSFETS |
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