| No. | Partie # | Fabricant | Description | Fiche Technique |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact G1 S1 T DF N 2X3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T |
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SamHop |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Paramete |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T DF N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RAT |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 12A R DS(ON) (m Ω) Max 75 @ VGS=10V 105 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RA |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Paramete |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parame |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 PIN 1 D1/D2 (Bottom view) G2 S2 S2 TDFN 2X5 G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C u |
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SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor tasheet http://www.datasheet4u.com/ S T F 8220 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IG |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RA |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) G1 3 S1 2 T DF N 2X3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATI |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( |
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