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SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET ) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = -250uA V GS = -4.5V, ID = -5.1A V GS = -2.7V, ID = -2.0A |
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SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4. |
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SamHop Microelectronics |
N-Channel Enhancement Mode MOSFET r OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V D |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 9A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 9A Min Typ C Max Unit 30 1 V |
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SamHop |
P-Channel Enhancement Mode MOS FET ID =-250uA -30 Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V Gate-Body Leakage ON CHARACTERISTICS b IGSS VGS = 25V, VDS =0V V -1 uA 100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V Drain-S ource On-S tate R e |
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SamHop |
Dual P-Channel Enhancement Mode Field Effect Transistor Unit OFF CHARACTERISTICS Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30 V Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V -1 uA Gate-Body Leakage ON CHARACTERISTICS b IGSS VGS = 20V, VDS= 0V 100 nA Gate Threshold Volt |
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SamHop Microelectronics Corp. |
Dual P-Channel Enhancement Mode Field Effect Transistor S TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V |
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SamHop |
Dual Enhancement Mode Field Effect Transistor herwise noted) P a ra meter S ymbol Condition Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage BVDSS VGS =0V, ID =250uA IDSS VD |
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