SamHop Microelectronics STD fiche technique

No.	Partie #	Fabricant	Description
1	2030PLS	SamHop Microelectronics	STD2030PLS R JC R JA 3 50 C /W C /W S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS =
2	STD9916L	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RA
3	STD302S	SamHop Microelectronics	N-Channel Logic Level E nhancement Mode Field Effect Transistor L CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS 5 Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b
4	STD666S	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD T
5	STD660	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol V
6	STD45N01	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS V
7	STD30N15	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA (D-PAK) STD SERIES TO-251 (I-PAK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM P
8	STD307S	SamHop Microelectronics	P-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Sy
9	STD419S	SamHop Microelectronics	P-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Sy
10	STD10N10	SamHop Microelectronics	N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS
11	STD20L01	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS
12	STD30L01	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS
13	STD40N01	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS
14	STD40N10	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Sourc
15	STD3030NL	SamHop Microelectronics	N-Channel Logic Level E nhancement Mode Field Effect Transistor LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Cond
16	STD3030NLS	SamHop Microelectronics	N-Channel Logic Level E nhancement Mode Field Effect Transistor CAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S a Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 12A V DS =
17	STD4530NLS	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor C R JA 3 50 C /W C /W S T U/D4530NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 28V,
18	STD2030PLS	SamHop Microelectronics	P-Channel Enhancement Mode Field Effect Transistor E CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V
19	STD2040PL	SamHop Microelectronics	P-Channel Enhancement Mode MOSFET U/D2040P L P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -32V, V GS= 0V V GS = 20V, V
20	STD20N03L	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor LECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.DataSheet4U.com Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, I