| No. | Partie # | Fabricant | Description | Fiche Technique |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Volta |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate |
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SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor |
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