| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SYNC POWER |
N-Channel MOSFET 30V/80A,RDS(ON)=6.0mΩ@VGS=10V 30V/80A,RDS(ON)=9.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability PPAK3x3-8L package design PIN CONFIGURATION PPAK3x3-8L PART |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/10.0A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 5.0A,RDS(ON)=28mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP –8 package design APPLICATIONS Power Management in No |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 100V/100A, RDS(ON)=8.2mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/TO- 263-2L /PPAK5x6-8L package design 2020/04/27 Ver |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 60V/340A, RDS(ON)=1.9mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability Enhanced Avalanche Ruggedness TO-220-3L package design APPLICATIONS DC/DC Converter H |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 。 30V/8.5A,RDS(ON)=14mΩ@VGS=10V 。 30V/7.8A,RDS(ON)=18mΩ@VGS=4.5V ◆ Super high density cell design for extremely low RDS (ON) ◆ Exceptional on-resistance and maximum DC current capability ◆ SOP –8 package design APPLICATIONS • Power Management in Note |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 30V/12A,RDS(ON)=13mΩ@VGS=10V 30V/10A,RDS(ON)=18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP –8 package design APPLICATIONS Power Management in Note b |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 30V/80A,RDS(ON)=4.7mΩ@VGS=10V 30V/80A,RDS(ON)=7.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-2L/TO-251S-3L package design PIN CONFIGURATION TO-252 |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/2.8A,RDS(ON)=90mΩ@VGS=4.5V 20V/2.2A,RDS(ON)=100mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 ( SC –70 ) package design PIN CONFIGURATION ( SOT-3 |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 30V/2.8A,RDS(ON)=58mΩ@VGS=10V 30V/2.3A,RDS(ON)=65mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN C |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design APPL |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 200V/9A,RDS(ON)=210mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252-2L package design PIN CONFIGURATION TO-252-2L 2020/09/21 Ver.3 PART MARKING Page 1 SPN12T2 |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/14A, RDS(ON)=20mΩ@VGS=4.5V 20V/7A, RDS(ON)=28mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-2L package design PIN CONFIGURATION TO-252-2L PART M |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 120V/100A , RDS(ON)=10mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN CONFIGURATION TO-220-3L TO-220F-3L P |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 100V/70A,RDS(ON)=12mΩ@VGS=10V 100V/70A,RDS(ON)=15mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L package design PIN |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 60V/125A , RDS(ON)=4.3mΩ@VGS=10V 60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L /PPAK5x6-8L/TO- |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 60V/230A, RDS(ON)=2.5mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020 |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 45V/125A, RDS(ON)=4.5mΩ@VGS=10V 45V/125A, RDS(ON)=7.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L package design |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/3.3A,RDS(ON)=19mΩ@VGS=4.5V 20V/2.8A,RDS(ON)=24mΩ@VGS=2.5V 20V/2.3A,RDS(ON)=32mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability UDFN2x2-6L package design P |
|
|
|
|
SYNC POWER |
N-Channel MOSFET 20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-353 ( SC – 70 ) packag |
|