| No. | Partie # | Fabricant | Description | Fiche Technique |
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SUMITOMO |
L-Band Medium & High Power GaAs FET ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application u |
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SUMITOMO |
L-Band Medium & High Power GaAs FET ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This i |
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SUMITOMO |
L-Band Medium & High Power GaAs FET ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This i |
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