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SUMITOMO |
X / Ku-Band Internally Matched FET • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-8F is a power GaAs FET t |
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Sumitomo |
C-Band Internally Matched FET • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -45dBc@Po = 28.5dBm • Broad Band: 3.1 to 3.5GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -45dBc@Po = 28.5dBm • Broad Band: 3.1 to 3.5GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB = 12.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 41.5dBm (Typ.) • High Gain: G1dB = 11.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 3.7 to 4.2GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5053-8F is a power GaAs FET |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 44.5dBm (Typ.) • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5053-25F is a power GaAs FET |
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SUMITOMO |
C-Band Internally Matched FET ・High Output Power: P1dB=45.5dBm(Typ.) ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=35%(Typ.) ・Broad Band: 5.0～5.3GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5053-35F is a power GaAs FET that is internally ma |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is in |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 44.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is in |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is in |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The |
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SUMITOMO |
C-Band Internally Matched FET • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The F |
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SUMITOMO |
C-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 38.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 27.0dBm Broad Band: 7.1 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM |
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SUMITOMO |
X-Band Internally Matched FET ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally mat |
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SUMITOMO |
X / Ku-Band Internally Matched FET • • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-6F |
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SUMITOMO |
X / Ku-Band Internally Matched FET ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-15F is a power GaAs FET that is internally |
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SUMITOMO |
L-Band Internally Matched FET • High Output Power: P1dB=45.0dBm(Typ.) • High Gain: G1dB=13.0dB(Typ.) • High PAE: hadd=43%(Typ.) • Broad Band: 2.025 to 2.285GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM2023L-30F is a power GaAs FET that |
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SUMITOMO |
L-Band Internally Matched FET • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM2527L-20F is a power GaAs FET |
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