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STMicroelectronics |
RF POWER TRANSISTORS RF POWER TRANSISTORS t V V A W o o V (BR)DSS Drain Source Voltage C C THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 0.5 o C/W November 1999 1/4 SD56120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symbol V (BR)DSS I DSS I GSS V GS(Q) V D |
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STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY ni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.75 o C/W January 2000 1/7 SD57030-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0 |
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STMicroelectronics |
RF POWER TRANSISTORS The LdmoSTFAMILY emperature Value 65 ± 20 14 236 200 -65 to 150 4. Gate 5. Gate Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 0.55 o C/W March 2000 1/7 SD57120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb |
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