| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
STW7NA90 nd Voltage (DC) Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area October 1998 Va l u e ST W7NA90 STH7NA90F I 900 900 ± 30 7 4.7 43 30 30 190 70 1.52 0.56 − −− −− − 4000 -65 to 1 |
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STMicroelectronics |
STW7NA80 Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2 -65 to 150 150 C C ( •) Pulse width limited by safe o |
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STMicroelectronics |
STW7NC90Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STW7NK90Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 1 3 2 STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z ■ ■ ■ ■ ■ 5.8 A 5.8 A TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate cha |
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STMicroelectronics |
Power MOSFET Type STF7N95K3 STP7N95K3 STW7N95K3 VDSS 950 V 950 V 950 V RDS(on) max < 1.35 Ω < 1.35 Ω < 1.35 Ω ID Pw 7.2 A 35 W 7.2 A 150 W 7.2 A 150 W ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrin |
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