| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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STMicroelectronics |
Rail-to-rail 0.9V nanopower comparator • Ultra-low current consumption: 210 nA typ. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Push-pull output • Supply operation from 0.85 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM / 300 V MM • SMD package A |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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STMicroelectronics |
8A SCRs Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 to 1000 0.2 to 15 Unit G A A K V mA K A G A A DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, f |
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STMicroelectronics |
nanopower comparators • Ultra low current consumption: 250 nA typ./op. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Open-drain outputs • Supply operation from 0.9 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM • Single version avai |
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STMicroelectronics |
nanopower comparators • Ultra low current consumption: 250 nA typ./op. • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Open-drain outputs • Supply operation from 0.9 V to 5.5 V • Wide temperature range: -40 to +125 °C • ESD tolerance: 8 kV HBM • Single version avai |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Datasheet - production data Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate tr |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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STMicroelectronics |
(TS861 - TS864) RAIL TO RAIL MICROPOWER BICMOS COMPARATORS n to microcontroler without additionnal pull-up resistor. www.DataSheet4U.com TS861ID-TS861IDT N.C. Inverting Input 1 Non-inverting Input 1 1 2 3 + 8 N.C. 7 VCC 6 Output 2 5 N.C. V DD 4 TS862IN-TS862ID-TS862IDT-TS862IPT APPLICATION Output 1 I |
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STMicroelectronics |
(TS861 - TS864) RAIL TO RAIL MICROPOWER BICMOS COMPARATORS n to microcontroler without additionnal pull-up resistor. www.DataSheet4U.com TS861ID-TS861IDT N.C. Inverting Input 1 Non-inverting Input 1 1 2 3 + 8 N.C. 7 VCC 6 Output 2 5 N.C. V DD 4 TS862IN-TS862ID-TS862IDT-TS862IPT APPLICATION Output 1 I |
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STMicroelectronics |
(TS861 - TS864) RAIL TO RAIL MICROPOWER BICMOS COMPARATORS n to microcontroler without additionnal pull-up resistor. www.DataSheet4U.com TS861ID-TS861IDT N.C. Inverting Input 1 Non-inverting Input 1 1 2 3 + 8 N.C. 7 VCC 6 Output 2 5 N.C. V DD 4 TS862IN-TS862ID-TS862IDT-TS862IPT APPLICATION Output 1 I |
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STMicroelectronics |
Power MOSFETs Type STS8DN3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 10 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate dr |
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STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. ID STS8N6LF6AG 60 V 24 mΩ 8A PTOT 3.2 W • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level Applications • Switching applica |
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STMicroelectronics |
Rail-to-rail 1.1V dual and quad nanopower comparators The TS882 is a dual and the TS884 device a • Ultra-low current consumption: 220 nA typ./op. quad comparator featuring ultra-low supply current (220 nA typical per operator with output • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Push-pu |
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STMicroelectronics |
Rail-to-rail 1.1V dual and quad nanopower comparators The TS882 is a dual and the TS884 device a • Ultra-low current consumption: 220 nA typ./op. quad comparator featuring ultra-low supply current (220 nA typical per operator with output • Propagation delay: 2 µs typ. • Rail-to-rail inputs • Push-pu |
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STMicroelectronics |
Sensitive and standard 8A SCRs • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V • Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR s |
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