| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
High temperature 50A SCRs High junction temperature: Tj = 150 °C High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component |
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STMicroelectronics |
High temperature 50A SCRs High junction temperature: Tj = 150 °C High noise immunity up to 150 °C Gate triggering current IGT = 15 mA Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component Applications M |
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STMicroelectronics |
50A 1200V automotive grade thyristor • AEC-Q101 qualified • Blocking voltage: +/- 1200 V • On-state current: 50 ARMS • High static and dynamic commutation: – dI/dt = 200 A/μs – dV/dt = 1000 V/μs • IGT = 50 mA • ECOPACK2 compliant component Applications • Automotive applications: on boar |
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STMicroelectronics |
High temperature 50A SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 500V/µs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK®2 compliant • Insulate |
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STMicroelectronics |
2 tag IC Includes ST state-of-the-art patented technology Contactless interface • Full compliancy with NFC Forum Type 2 tag and ISO/IEC 14443 type A specifications • Power supplied by 13.56 MHz transmitter field • Data transfer at 106 kbit/s • Anticollision s |
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STMicroelectronics |
P-channel MOSFET Type STN5PF02V ■ ■ VDSS 20V RDS(on) <0.080Ω ID 4.2A 2 Ultra low threshold gate drive (2.5V) Standard outline for easy automated surface mount assembly 1 2 3 SOT-223 Description This Power MOSFET is the latest development of STMicroelectronics |
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