No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
Automotive adjustable voltage reference • AEC-Q100 qualified • Adjustable output voltage: 2.5 to 36 V • Sink current capability: 1 to 100 mA • Typical output impedance: 0.22 Ω • 0.5% voltage precision only on the TL431B version • 1% and 2% voltage precision • Automotive temp. range -40 °C |
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STMicroelectronics |
N-channel Power MOSFET Order code STL4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 2A Industry’s lowest RDS(on) * area Industry’s best FoM (figure of merit) Ultra low-gate charge 100 % avalanche tested Zener-protected Applications Switching applications Descripti |
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STMicroelectronics |
Automotive adjustable voltage reference • AEC-Q100 qualified • Adjustable output voltage: 2.5 to 36 V • Sink current capability: 1 to 100 mA • Typical output impedance: 0.22 Ω • 0.5% voltage precision only on the TL431B version • 1% and 2% voltage precision • Automotive temp. range -40 °C |
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STMicroelectronics |
N-channel Power MOSFET Order code STL45N65M5 VDS @ TJmax. 710 V RDS(on) max. 0.086 Ω ID PTOT 22.5 A 160 W Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications Switching applications De |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. STL45N60DM6 600 V 0.110 Ω • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Ze |
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STMicroelectronics |
P-Channel Power MOSFET 1 2 3 Order code VDS RDS(on) max. ID 1 2 3 6 5 4 PowerFLAT 2x2 STL4P3LLH6 30 V 56 mΩ 4A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss 1(D) 2(D) 3(G) Applications • Switching a |
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STMicroelectronics |
P-CHANNEL POWER MOSFET 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Order code STL4P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 V • Ultra logic level • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate dri |
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STMicroelectronics |
POWER MOSFET 1 2 3 4 PowerFLAT™5x6 double island Figure 1. Internal schematic diagram Order code Channel VDS RDS(on) max ID N STL40C30H3LL P 0.021 Ω @ 10 V 10 A 30 V 0.03 Ω @ 10 V 8 A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
Automotive adjustable voltage reference AEC-Q100 qualified Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 mA Typical output impedance: 0.22 Ω 0.5% voltage precision only on the TL431B version 1% and 2% voltage precision Automotive temp. range -40 °C |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6, |
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STMicroelectronics |
N-channel Power MOSFET Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applicati |
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STMicroelectronics |
P-channel Power MOSFET Order code V DS STL42P6LLF6 -60 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max 26 mΩ ID -42 A Applications • Switching applications Description This device is a P-channel |
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STMicroelectronics |
Dual N-channel Power MOSFET Order code STL40DN3LLH5 VDS 30 V RDS(on) max. ID 0.018 Ω 40 A Figure 1. Internal schematic diagram • AEC-Q101 qualified • Low on-resistance • High avalanche ruggedness • Low gate drive power loss • Wettable flank package Applications • Switching |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STL4N10F7 100 V • Excellent FoM (figure of merit) • Low Crss/Ciss ration for EMI immunity • High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A Applications • Switching applications Description This N-channel Power MOSFET ut |
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STMicroelectronics |
P-CHANNEL POWER MOSFET Order code VDS STL42P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 18 mΩ ID 42 A PTOT 75 W Applications • Switching applications AM01475v4 Description This d |
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