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STMicroelectronics |
ISOTOP FAST POWER MOSFET 0 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 ( •) Pulse width limited by safe operating area October 1998 www.DataSheet4U.com STE26NA90 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance C |
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STMicroelectronics |
ISOTOP STripFET Power MOSFET Type VDSS RDS(on) ID STE250NS10 100 V <0.0055 Ω 220 A t(s) ■ Standard threshold drive ■ 100% avalanche tested ducDescription ProThis Power MOSFET is the latest development of STMicroelectronics unique "single feature size" testrip-based proces |
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STMicroelectronics |
N-channel 50A - 600V - ISOTOP Very fast PowerMESTM IGBT Type STGE50NC60VD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Descripti |
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STMicroelectronics |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT Type STGE50NC60WD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Descripti |
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STMicroelectronics |
ISOTOP FAST POWER MOSFET 96 450 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 ( •) Pulse width limited by safe operating area October 1998 www.DataSheet4U.com STE24NA100 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resist |
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STMicroelectronics |
OUTLINE AND MECHANICAL DATA |
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