STMicroelectronics S20 fiche technique

No.	Partie #	Fabricant	Description
1	STPS20S100CT	STMicroelectronics	POWER SCHOTTKY RECTIFIER AND BENEFITS ■ ■ ■ ■ 2 x 10 A 100 V 175°C 0.71 V A1 K A2 High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier
2	STPS20H100CF	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER AND BENEFITS n 2 x 10 A 100 V 175°C 0.64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAG
3	AVS20	STMicroelectronics	AUTOMATIC VOLTAGE SWITCH SMPS < 300W ntrol remains locked to the 230V mode and avoids any high voltage spike when the voltage is restored to 230V. When connected to VDD, the mode input desactivates this option “this is the follower option”. • The TRIAC is specially designed for this app
4	STM8S208R6	STMicroelectronics	24 MHz STM8S 8-bit MCU  Core – Max fCPU: up to 24 MHz, 0 wait states @ fCPU 16 MHz – Advanced STM8 core with Harvard architecture and 3-stage pipeline – Extended instruction set – Max 20 MIPS @ 24 MHz  Memories – Program: up to 128 Kbytes Flash; data retention 20 year
5	STPS200170TV1	STMicroelectronics	High voltage power Schottky rectifier and benefits ■ ■ ■ ■ ■ Negligible switching losses Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop Insulated package – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF A2 K2 A1 K1 ISOT
6	STPS20H100CR	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
7	GS20AC-12-1	STMicroelectronics	20 WATT AC-DC CONVERTER 6 (1.42) 92 (3.62) 2 (0.07) 3 (0.12) 77 (3.03) 20 (0.79) 5 (0.20) 18 (0.71) 15 (0.59) 52.5 (2.07) 6 (0.24) 1 (0.04) 90 (3.54) 8.5 (0.33) 8 (0.31) 18.5 (0.73) 4 (0.16) 7 (0.28) 2 Wires: 8.8 (0.35) 4 (0.16) 18.5 (0.73) 34 (1.34) + Vout RE
8	LIS202DL	STMicroelectronics	MEMS motion sensor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.16V to 3.6V supply voltage 1.8V compatible IOs <1mW power consumption ±2g/±8g dynamically selectable Full-Scale I2C/SPI digital output interface Programmable interrupt generator Click and double click recognition Embedded hig
9	STPS20120C	STMicroelectronics	power Schottky rectifier  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPACK®2 compliant component for DPAK on demand November 2016 This is information on a
10	STM8S207S6	STMicroelectronics	24 MHz STM8S 8-bit MCU  Core – Max fCPU: up to 24 MHz, 0 wait states @ fCPU 16 MHz – Advanced STM8 core with Harvard architecture and 3-stage pipeline – Extended instruction set – Max 20 MIPS @ 24 MHz  Memories – Program: up to 128 Kbytes Flash; data retention 20 year
11	STPS20H100CT	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
12	STPS20H100CG	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
13	STTS2002	STMicroelectronics	2.3 V memory module temperature sensor ■ STTS2002 is a 2.3 V memory module temperature sensor with 2 Kb SPD EEPROM forward compatible with JEDEC standard TSE 2002a2 and backward compatible with STTS424E02 Operating temperature range: – –40 °C to +125 °C Single supply voltage: 2.3 V to 3.
14	STGIPS20C60	STMicroelectronics	600V short-circuit rugged IGBT • IPM 20 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Short-circuit rugged IGBTs • 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors • Undervoltage
15	STPS20150CT	STMicroelectronics	High voltage power Schottky rectifier • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 complian
16	SCTHS200N120G3AG	STMicroelectronics	Automotive-grade silicon carbide Power MOSFET Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very hig
17	GS20AC-12-2	STMicroelectronics	20 WATT AC-DC CONVERTER 6 (1.42) 92 (3.62) 2 (0.07) 3 (0.12) 77 (3.03) 20 (0.79) 5 (0.20) 18 (0.71) 15 (0.59) 52.5 (2.07) 6 (0.24) 1 (0.04) 90 (3.54) 8.5 (0.33) 8 (0.31) 18.5 (0.73) 4 (0.16) 7 (0.28) 2 Wires: 8.8 (0.35) 4 (0.16) 18.5 (0.73) 34 (1.34) + Vout RE
18	TS2012	STMicroelectronics	Filter-free stereo 2 x 2.8W class D audio power amplifier • Operating range from VCC = 2.5 V to 5.5 V • Standby mode active low • Output power per channel: 1.35 W @ 5 V or 0.68 W @ 3.6 V into 8 Ω with 1 % THD+N max • Output power per channel: 2.2 W @ 5 V into 4 Ω with 1 % THD+N max • Four gains can be selec
19	AVS200	STMicroelectronics	AUTOMATIC VOLTAGE SWITCH SMPS < 300W ntrol remains locked to the 230V mode and avoids any high voltage spike when the voltage is restored to 230V. When connected to VDD, the mode input desactivates this option “this is the follower option”. • The TRIAC is specially designed for this app
20	S2000AFI	STMicroelectronics	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR TICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T C = 125 C o Min. Typ .