| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching application |
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STMicroelectronics |
Power MOSFET Type STB85N15F4 STP85N15F4 ■ ■ ■ VDSS 150 V 150 V RDS(on) max < 0.019 Ω < 0.019 Ω ID 85 A 85 A 3 1 1 2 3 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested D²PAK TO-220 Application ■ Switching applications |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB85NF55T4 STP85NF55 VDS 55 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 8.0 mΩ ID 80 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description These P |
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STMicroelectronics |
N-channel enhancement-mode lateral MOSFETs • Excellent thermal stability • Common source configuration • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V • Plastic package • ESD protection • In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Pa |
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