| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
Power transistor |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS 1/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Sym |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N06LFI 60 60 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
|
|
|
|
STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N06LFI 60 60 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
|
|
|
|
STMicroelectronics |
N-channel MOSFET TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N ■ ■ ■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input |
|
|
|
|
STMicroelectronics |
MEDIUM POWER AMPLIFIER Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-B |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS 1/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Sym |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
|
|
|
|
STMicroelectronics |
Ultra low power 32-Mbit EEPROM Interface • Supports serial peripheral interface (SPI) and dual/quad outputs High speed frequency • Clock frequency up to 80MHz • Fast read single/dual/quad output with one dummy byte – Dual output data transfer up to 160Mbits/s – Quad output data tr |
|
|
|
|
STMicroelectronics |
Ultra low power 32-Mbit EEPROM Interface • Supports serial peripheral interface (SPI) and dual/quad outputs High speed frequency • Clock frequency up to 80MHz • Fast read single/dual/quad output with one dummy byte – Dual output data transfer up to 160Mbits/s – Quad output data tr |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
Serial Flash Memory summary ■ 32Mbit of Flash Memory ■ 2.7 to 3.6V Single Supply Voltage ■ SPI Bus Compatible Serial Interface ■ 50MHz Clock Rate (maximum) ■ VPP = 9V for Fast Program/Erase mode (optional) ■ Page Program (up to 256 Bytes) – in 1.4ms (typical) – in 0.8ms |
|
|
|
|
STMicroelectronics |
STP32N05L c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP32N05LFI 50 50 ± 15 32 22 128 105 0.7 -65 to 175 175 19 13 128 |
|