| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
64-Mbit Flash Memory and 8-Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configu |
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STMicroelectronics |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant) ■ E |
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STMicroelectronics |
32 Mbit Flash Memory and 4 Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top F |
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STMicroelectronics |
128 Mbit Flash Memory 32 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tole |
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STMicroelectronics |
64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top |
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STMicroelectronics |
64-Mbit Flash Memory and 16 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top |
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STMicroelectronics |
64-Mbit Flash Memory and 8-Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configu |
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STMicroelectronics |
64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De |
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STMicroelectronics |
64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De |
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STMicroelectronics |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant) ■ E |
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STMicroelectronics |
32 Mbit Flash Memory and 4 Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top F |
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STMicroelectronics |
128 Mbit Flash Memory 32 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tole |
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STMicroelectronics |
128-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPP = 9V for fast program (12V tolerant) ■ ELECTR |
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STMicroelectronics |
128-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPP = 9V for fast program (12V tolerant) ■ ELECTR |
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STMicroelectronics |
64-Mbit Flash Memory and 32-Mbit PSRAM ■ Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM Supply voltage – VDDF = VDDP = VDDQF = 1.7 V to 1.95 V Low power consumption Electronic signature – Manufacturer Code: 20h – Device code (top |
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STMicroelectronics |
64-Mbit Flash Memory and 32-Mbit PSRAM ■ Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM Supply voltage – VDDF = VDDP = VDDQF = 1.7 V to 1.95 V Low power consumption Electronic signature – Manufacturer Code: 20h – Device code (top |
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STMicroelectronics |
Multi-Chip Package SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQF = 1.7 to 1.95V – VPPF = 9V for fast program (12V tolerant) ■ ELE |
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STMicroelectronics |
Multi-Chip Package SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQF = 1.7 to 1.95V – VPPF = 9V for fast program (12V tolerant) ■ ELE |
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