| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) t(s) ■ Improved die-to-footprint ratio ■ Very low profile package (1 mm max) uc ■ Very low thermal resistance rod ■ Very low gate charge ■ Low threshold device lete PApplications o ■ Switching a |
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STMicroelectronics |
Single and dual isolated 5V low drop linear voltage regulators Symbol VS ΔVO Vdp Parameter Max DC supply voltage Max output voltage tolerance Max dropout voltage IO Output current Iqn Quiescent current 1. For L5050S - single output. Up to 100 mA as pulsed current 2. For L5050SD - dual output. Up to 2x100 |
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STMicroelectronics |
fully protected low-side driver Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to th |
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STMicroelectronics |
fully protected low-side driver Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to th |
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STMicroelectronics |
Dual N-channel Power MOSFET Order code STL50DN6F7 VDS 60 V RDS(on) max. 11 mΩ ID 57 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Descript |
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STMicroelectronics |
fully protected low-side driver SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A • Automotive qualified • Drain current: 25 A • ESD protection • Overvoltage clamp • Thermal shutdown • Current and power limitation • Very low standby current • Very low electro |
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STMicroelectronics |
fully protected low-side driver SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A • Automotive qualified • Drain current: 25 A • ESD protection • Overvoltage clamp • Thermal shutdown • Current and power limitation • Very low standby current • Very low electro |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL50N6F7 VDS 60 V RDS(on) max. 11 mΩ ID 60 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Descripti |
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