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STMicroelectronics H7N DataSheet

No. Partie # Fabricant Description Fiche Technique
1
H7NA80FI

STMicroelectronics
STH7NA80FI
nsulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2  -65 to 150 150 C C (
•) Pulse width limited by safe ope
Datasheet
2
H7NA80

STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
nsulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.5 26 60 0.48 4000 A A A W W /o C V o o 6.5 4 26 150 1.2  -65 to 150 150 C C (
•) Pulse width limited by safe ope
Datasheet



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