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STMicroelectronics |
4- and 5-line Transil arrays ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High ESD protection level High integration Suitable for high density boards 4 unidirectional Transil diodes (ESDA6V1M6) 5 unidirectional Transil diodes (ESDA6V1-5M6) Breakdown Voltage VBR = 6.1 V min High peak power dissipati |
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STMicroelectronics |
2 line EMI filter and ESD protection set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered |
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STMicroelectronics |
Automotive dual Transil array AEC-Q101 qualified Dual unidirectional Transil functions Low leakage current: IR max. < 20 µA at VBR 300 W peak pulse power (8/20 µs) Benefits High ESD protection level: up to 25 kV High integration Suitable for high density boards AE |
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STMicroelectronics |
ESD protected 5V RS-232 transceiver ■ ■ ■ ■ ■ ESD protection for RS-232 I/O pins: ± 15 kV human body model Guaranteed 230 kbps date rate Guaranteed slew rate range 3 to 30 V/ms Operate from a single 5 V power supply SOP SOP Large Description The ST202E/ST232E are a 2 driver 2 receive |
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STMicroelectronics |
3.3V ultra-low clamping single line bidirectional ESD protection • Ultra-low clamping voltage: 6.3 V TLP at 16 A Ipp • Bidirectional protection diode • Very low dynamic resistance: 85 mΩ • Low leakage current: 100 nA max at 3.3 V VRM • ST0201 package • ECOPACK2 compliant component • Exceeds IEC 61000-4-2 level 4: |
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STMicroelectronics |
Low clamping and ultra low capacitance single line bidirectional ESD protection • Low clamping voltage: • Bidirectional diode • Dynamic resistance Rd = 0.3 Ω typ. • Low leakage current • ST0201 package size compatible • Ultra small PCB area: 0.18 mm² • ECOPACK2 compliant component • Complies with the following standards: IEC 610 |
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STMicroelectronics |
LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION ARRAYOF 12 DIODESFOR ESDPROTECTION. PEAK REVERSE VOLTAGE VRRM= 18V PER DIODE. VERYLOWCAPACITANCE PERDIODE: C <5pF. VERY LOW LEAKAGE CURRENT : IR < 2 µA. I/O 1 SO8 FUNCTIONAL DIAGRAM REF 1 I/O 2 I/O 3 I/O 6 REF 2 COMPLIESWITHTHE FOLLOWINGSTANDA |
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STMicroelectronics |
TRANSIL ARRAY 18 BIDIRECTIONAL TRANSIL™ FUNCTIONS LOW CAPACITANCE : C = 30pF @ VRM 500 W peak pulse power (8/20 µs) DESCRIPTION The ESDA25DB3 is a dual monolithic voltage suppressor designed to protect componentswhich are connected to data and transmission lines a |
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STMicroelectronics |
QUAL TRANSILO ARRAY FOR ESD PROTECTION ■ 2 up to 5 Unidirectional Transil functions ■ Breakdown voltage: VBR = 6.1 V min. and 25 V min. ■ Low leakage current: < 1 µA ■ Very small PCB area < 4.2 mm2 typically Description The ESDAxxxWx are monolithic suppressors designed to protect compone |
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STMicroelectronics |
QUAD TRANSIL ARRAY n n SOT23-5L (SC-59) ESDAxxSC5 FUNCTIONAL DIAGRAM SOT23-5L SOT23-6L (SC-59) ESDAxxSC6 n 4 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 20 µA at VBR 500 W PEAK PULSE POWER (8/20 µs) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are m |
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STMicroelectronics |
QUAD TRANSIL ARRAY n n SOT23-5L (SC-59) ESDAxxSC5 FUNCTIONAL DIAGRAM SOT23-5L SOT23-6L (SC-59) ESDAxxSC6 n 4 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 20 µA at VBR 500 W PEAK PULSE POWER (8/20 µs) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are m |
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STMicroelectronics |
QUAD TRANSIL ARRAY FOR ESD PROTECTION n n SOT23-5L (SC-59) ESDAxxSC5 FUNCTIONAL DIAGRAM SOT23-5L SOT23-6L (SC-59) ESDAxxSC6 n 4 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 20 µA at VBR 500 W PEAK PULSE POWER (8/20 µs) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are m |
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STMicroelectronics |
High power transient voltage suppressor • Low clamping voltage • Typical peak pulse power: – 1300 W (8/20µs) • Stand-off voltage 12 V • Unidirectional diode • Low leakage current: – 0.2 µA at 25 °C Complies with the following standards: • IEC 61000-4-2 level 4 – ±30 kV (air discharge) – ±3 |
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STMicroelectronics |
EOS and ESD Transil protection ■ Breakdown voltage: 12 V, 18 V ■ Unidirectional device ■ High peak power dissipation: 450 W (8/20 µs waveform) ■ ESD protection level better than IEC 61000-4-2 level 4: 30 kV contact discharge. ■ Low leakage current < 0.5 µA at 5 V ■ PCB area: 1.3 m |
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STMicroelectronics |
(ESDALC6V1xxM6) 4 and 5 line low capacitance TRANSIL array I/O1 1 6 I/O5 5 GND 4 I/O3 ■ ■ ■ www.DataSheet4U.com 4 unidirectional TRANSIL diodes (ESDALC6V1M6) 5 unidirectional TRANSIL diodes (ESDALC6V1-5M6) Breakdown Voltage VBR = 6.1 V min Low diode capacitance (12 pF typ at 0 V) Low leakage current < 70 n |
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STMicroelectronics |
Single line low capacitance ■ ■ ■ ■ www.DataSheet4U.com 1 line low capacitance TRANSIL diode Bidirectional ESD protection Breakdown Voltage VBR = 6.1 V min. Low diode capacitance (22 pF typ. at 0 V) Low leakage current: < 100 nA at 3 V Very small PCB area: 0.6 mm2 Leadfree pac |
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STMicroelectronics |
EOS and ESD Transil protection ■ ■ ■ ■ Breakdown voltage VBR = 8.2 V Unidirectional device High peak power dissipation: 500 W (8/20 µs waveform) ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge Low leakage current (< 0.5 µA @ 5 V) Very small PCB ar |
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STMicroelectronics |
4- and 5-line Transil arrays ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High ESD protection level High integration Suitable for high density boards 4 unidirectional Transil diodes (ESDA6V1M6) 5 unidirectional Transil diodes (ESDA6V1-5M6) Breakdown Voltage VBR = 6.1 V min High peak power dissipati |
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STMicroelectronics |
EMI filter and ESD protection ■ High-density capacitor ■ EMI low-pass filter and ESD protection ■ High-efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very small PCB footprint: 0.77 mm x 1.17 mm ■ Very thin package: 0.605 mm ■ High reliability offered by monolith |
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STMicroelectronics |
2-line IPAD EMI filter and ESD protection ■ EMI symmetrical (I/O) low-pass filter ■ High efficiency in EMI filtering ■ Very low PCB space consumption: 1.0 mm x 1.45 mm ■ Very thin package: 0.6 mm max ■ High efficiency in ESD suppression ■ High reliability offered by monolithic integration ■ |
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